US Patent Issued to ENKRIS SEMICONDUCTOR on July 21 for "Semiconductor structures and manufacturing methods thereof" (Chinese Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,218, issued on July 21, was assigned to ENKRIS SEMICONDUCTOR INC. (Suzhou, China).

"Semiconductor structures and manufacturing methods thereof" was invented by Kai Cheng (Suzhou, China) and Peng Xiang (Suzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes: a semiconductor substrate, a back barrier layer, a channel layer and an etch stop layer arranged from bottom to up; and a P-type semiconductor layer located on a source region and a drain region of the etch stop layer."

The patent was filed on Aug. 13, 2020, un...