US Patent Issued to ENKRIS SEMICONDUCTOR on July 21 for "Semiconductor structure and manufacturing method thereof" (Chinese Inventor)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,221, issued on July 21, was assigned to ENKRIS SEMICONDUCTOR INC. (Suzhou, China).

"Semiconductor structure and manufacturing method thereof" was invented by Kai Cheng (Suzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure and a manufacturing method thereof are provided in the present application provides. The semiconductor structure includes a substrate and a heterojunction structure located on the substrate. The heterojunction structure includes a channel layer and a barrier layer located on the channel layer. The channel layer includes at least one n-type doped layer. The manufacturing method of the semiconductor ...