ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,236, issued on Sept. 8, was assigned to ROHM Co. LTD. (Kyoto, Japan). "Semiconductor device" was invented by Shoya Sanda (Kyoto, Japan). A... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,237, issued on Sept. 8, was assigned to Infineon Technologies Austria AG (Villach, Austria). "Semiconductor device and method" was invented... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,238, issued on Sept. 8, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Ohmic electrode for two-dimensional... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,239, issued on Sept. 8, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Under epitaxy isolation structure" ... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,240, issued on Sept. 8, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Structure with self-aligned offset gate cont... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,241, issued on Sept. 8, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan). "Common rail contact" was invented b... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,243, issued on Sept. 8, was assigned to Renesas Electronics Corp. (Tokyo). "Semiconductor device and method of manufacturing the same" was ... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,244, issued on Sept. 8, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Method of manufacturing a semicondu... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,245, issued on Sept. 8, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Forksheet field effect transistor including ... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,247, issued on Sept. 8, was assigned to Mitsubishi Electric Corp. (Tokyo). "Semiconductor device including a FWD region formed on a substra... Read More