US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 8 for "Method of manufacturing a semiconductor device with multi-layer gate spacers" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,244, issued on Sept. 8, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Method of manufacturing a semiconductor device with multi-layer gate spacers" was invented by Wen-Kai Lin (Yilan County, Taiwan), Che-Hao Chang (Hsinchu, Taiwan), Chi On Chui (Hsinchu, Taiwan) and Yung-Cheng Lu (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor devices and methods of manufacture are presented in which spacers are manufactured on sidewalls of gates for semiconductor devices. In embodiments the spacers comprise a first seal, a second seal, and a contact etch stop layer, in which the first seal comprises a ...