US Patent Issued to Renesas Electronics on Sept. 8 for "Semiconductor device and method of manufacturing the same" (Japanese Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,243, issued on Sept. 8, was assigned to Renesas Electronics Corp. (Tokyo).

"Semiconductor device and method of manufacturing the same" was invented by Tetsuya Yoshida (Tokyo), Shibun Tsuda (Tokyo) and Hideki Makiyama (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A low withstand voltage MISFET and a high withstand voltage MISFET are formed on an SOI substrate. An ON operation and an OFF operation of the low withstand voltage MISFET are controlled by a first gate potential to be supplied to a first gate electrode and a back gate potential to be supplied to a first well region. An ON operation and an OFF operation of the high withstand voltage ...