US Patent Issued to Mitsubishi Electric on Sept. 8 for "Semiconductor device including a FWD region formed on a substrate and IGBT region formed on the substrate" (Japanese Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,247, issued on Sept. 8, was assigned to Mitsubishi Electric Corp. (Tokyo).

"Semiconductor device including a FWD region formed on a substrate and IGBT region formed on the substrate" was invented by Tetsuo Takahashi (Tokyo), Hidenori Fujii (Tokyo) and Shigeto Honda (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "According to an aspect of the present disclosure, a semiconductor device includes a FWD region that has, on an upper surface side of a substrate, a p-type anode region, a first p-type contact region having a higher p-type impurity concentration than the p-type anode region, and a first trench, and an IGBT region that surrounds the FWD ...