ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,184, issued on Sept. 1, was assigned to Infineon Technologies AG (Neubiberg, Germany). "Semiconductor device including protruding region" w... Read More
ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,185, issued on Sept. 1, was assigned to STMICROELECTRONICS S.r.l. (Agrate Brianza, Italy). "HEMT transistor of the normally off type includ... Read More
ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,186, issued on Sept. 1, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Controlled doping in a gate dielect... Read More
ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,187, issued on Sept. 1, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Integrated circuit with pattern ove... Read More
ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,188, issued on Sept. 1, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor device and method of fabricati... Read More
ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,189, issued on Sept. 1, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan). "Method for fabricating high electron mobili... Read More
ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,190, issued on Sept. 1, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea). "Semiconductor device including inclined c... Read More
ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,191, issued on Sept. 1, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Multiple fin heights for effective width tun... Read More
ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,192, issued on Sept. 1, was assigned to SHANGHAI BRIGHT POWER SEMICONDUCTOR Co. LTD. (Shanghai). "Metal-oxide semiconductor field-effect tr... Read More
ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,193, issued on Sept. 1, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan). "FinFET LDMOS device" was invented by Yi Chu... Read More