US Patent Issued to UNITED MICROELECTRONICS on Sept. 1 for "Method for fabricating high electron mobility transistor" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,189, issued on Sept. 1, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan).

"Method for fabricating high electron mobility transistor" was invented by Chih-Wei Chang (Tainan City, Taiwan), Yao-Hsien Chung (Kaohsiung City, Taiwan), Shih-Wei Su (Tainan City, Taiwan), Hao-Hsuan Chang (Kaohsiung City, Taiwan), Ting-An Chien (Tainan City, Taiwan) and Bin-Siang Tsai (Changhua County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a high electron mobility transistor is disclosed. A substrate is provided. A channel layer is formed on the substrate. An electron supply layer is formed on the channel layer. A diel...