US Patent Issued to SHANGHAI BRIGHT POWER SEMICONDUCTOR on Sept. 1 for "Metal-oxide semiconductor field-effect transistor having enhanced high-frequency performance" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,192, issued on Sept. 1, was assigned to SHANGHAI BRIGHT POWER SEMICONDUCTOR Co. LTD. (Shanghai).

"Metal-oxide semiconductor field-effect transistor having enhanced high-frequency performance" was invented by Shuming Xu (Shanghai), Lei Shi (Shanghai) and Jian Wu (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "An LDMOS device includes a semiconductor substrate of a first conductivity type, a doped drift region of a second conductivity type formed on at least a portion of the substrate, and a body region of the first conductivity type formed in the drift region. Source and drain regions of the second conductivity type are formed proximate an u...