ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,836, issued on June 9, was assigned to GAN SYSTEMS INC. (Ottawa). "Scalable Circuit-Under-Pad device topologies for lateral GaN power transi... Read More
ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,837, issued on June 9, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Semiconductor device and methods ... Read More
ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,838, issued on June 9, was assigned to FUJI ELECTRIC Co. LTD. (Kawasaki, Japan). "Silicon carbide semiconductor device" was invented by Take... Read More
ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,839, issued on June 9, was assigned to Vanguard International Semiconductor Corp. (Hsinchu, Taiwan). "Semiconductor structures" was invented... Read More
ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,840, issued on June 9, was assigned to APPLIED MATERIALS Inc. (Santa Clara, Calif.). "Methods of formation of a SiGe/Si superlattice" was in... Read More
ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,841, issued on June 9, was assigned to PlayNitride Display Co. Ltd. (MiaoLi County, Taiwan). "Epitaxial structure with increased electrostat... Read More
ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,843, issued on June 9, was assigned to TEXAS INSTRUMENTS Inc. (Dallas). "High band-gap devices with a doped high band-gap gate electrode ext... Read More
ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,844, issued on June 9, was assigned to Renesas Electronics Corp. (Tokyo). "Semiconductor device and method of manufacturing the same" was in... Read More
ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,845, issued on June 9, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Semiconductor structures with red... Read More
ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,846, issued on June 9, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsin-Chu, Taiwan). "Gate structure and method" was inven... Read More