US Patent Issued to Renesas Electronics on June 9 for "Semiconductor device and method of manufacturing the same" (Japanese Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,844, issued on June 9, was assigned to Renesas Electronics Corp. (Tokyo).

"Semiconductor device and method of manufacturing the same" was invented by Tomoki Ayano (Tokyo), Takahiro Maruyama (Tokyo) and Yuya Abiko (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A trench is formed in a semiconductor substrate. An insulating film is formed in the trench and on an upper surface of the semiconductor substrate. An ion implantation is performed to the insulating film. An etching treatment is performed to the insulating film, thereby a thickness of the insulating film is reduced. A conductive film is formed in the trench via the insulating film. In pla...