US Patent Issued to Taiwan Semiconductor Manufacturing on June 9 for "Gate structure and method" (Taiwanese Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,846, issued on June 9, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsin-Chu, Taiwan).

"Gate structure and method" was invented by Ta-Chun Lin (Hsinchu, Taiwan), Jhon Jhy Liaw (Hsinchu County, Taiwan) and Kuo-Hua Pan (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a first active region over a substrate and extending along a first direction, a gate structure over the first active region and extending along a second direction substantially perpendicular to the first direction, a gate-cut feature abutting an end of the gate structure, and a channel isolation feature extending along ...