US Patent Issued to GAN SYSTEMS on June 9 for "Scalable Circuit-Under-Pad device topologies for lateral GaN power transistors" (Canadian Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,836, issued on June 9, was assigned to GAN SYSTEMS INC. (Ottawa).

"Scalable Circuit-Under-Pad device topologies for lateral GaN power transistors" was invented by Ahmad Mizan (Kanata, Canada), Hossein Mousavian (Kanata, Canada) and Xiaodong Cui (Nepean, Canada).

According to the abstract* released by the U.S. Patent & Trademark Office: "Circuit-Under-Pad (CUP) device topologies for high current lateral GaN power transistors comprise source, drain and gate finger electrodes on active regions of a plurality of sections of a multi-section transistor, and a contact structure comprising source and drain contact areas, e.g. drain and source pads extending over active regions of each sec...