US Patent Issued to PlayNitride Display on June 9 for "Epitaxial structure with increased electrostatic discharge protection capability containing AlGaInP layers" (Taiwanese Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,841, issued on June 9, was assigned to PlayNitride Display Co. Ltd. (MiaoLi County, Taiwan).

"Epitaxial structure with increased electrostatic discharge protection capability containing AlGaInP layers" was invented by Shen-Jie Wang (MiaoLi County, Taiwan), Hsin-Chiao Fang (MiaoLi County, Taiwan) and Yen-Lin Lai (MiaoLi County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An epitaxial structure includes a first type semiconductor layer, an active layer, a second type semiconductor layer, and a lattice mismatch layer. The first type semiconductor layer includes a material of aluminum gallium indium phosphide. The active layer is disposed on a ...