ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,826, issued on June 9, was assigned to ROBERT BOSCH GMBH (Stuttgart, Germany). "Field-effect transistor, and methods for production" was inv... Read More
ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,827, issued on June 9, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Nanosheet transistors with buried power rails"... Read More
ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,828, issued on June 9, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Structure and formation method of... Read More
ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,829, issued on June 9, was assigned to SK Hynix NAND Product Solutions Corp. (Rancho Cordova, Calif.). "Reducing band-to-band tunneling in s... Read More
ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,830, issued on June 9, was assigned to MINEBEA POWER SEMICONDUCTOR DEVICE INC. (Ibaraki, Japan). "Semiconductor device and power conversion ... Read More
ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,831, issued on June 9, was assigned to Renesas Electronics Corp. (Tokyo). "Semiconductor device" was invented by Yuta Nabuchi (Tokyo) and Ak... Read More
ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,832, issued on June 9, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Reduced N-well and P-well spacing" was invente... Read More
ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,833, issued on June 9, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor device" was invented by Seung Mi... Read More
ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,834, issued on June 9, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor devices including silicon nitrid... Read More
ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,835, issued on June 9, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Multilayer work function metal in nanosheet st... Read More