US Patent Issued to International Business Machines on June 9 for "Nanosheet transistors with buried power rails" (New York Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,827, issued on June 9, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Nanosheet transistors with buried power rails" was invented by Julien Frougier (Albany, N.Y.), Nicolas Loubet (Guilderland, N.Y.), Sagarika Mukesh (Albany, N.Y.), Prasad Bhosale (Albany, N.Y.), Ruilong Xie (Niskayuna, N.Y.), Andrew Herbert Simon (Fishkill, N.Y.), Takeshi Nogami (Schenectady, N.Y.), Lawrence A. Clevenger (Saratoga Springs, N.Y.), Roy R. Yu (Poughkeepsie, N.Y.), Andrew M. Greene (Slingerlands, N.Y.) and Daniel Charles Edelstein (White Plains, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a substrate and...