US Patent Issued to MINEBEA POWER SEMICONDUCTOR DEVICE on June 9 for "Semiconductor device and power conversion device" (Japanese Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,830, issued on June 9, was assigned to MINEBEA POWER SEMICONDUCTOR DEVICE INC. (Ibaraki, Japan).

"Semiconductor device and power conversion device" was invented by Haruka Shimizu (Tokyo), Takeru Suto (Tokyo) and Yuki Mori (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes: a semiconductor substrate having a drift layer of a first conductivity type, a body region of a second conductivity type, and a JFET region of the first conductivity type in contact with the body region on both sides on the drift layer; a plurality of trenches formed in an upper surface of the semiconductor substrate and extending in a first direc...