US Patent Issued to ROBERT BOSCH on June 9 for "Field-effect transistor, and methods for production" (German Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,826, issued on June 9, was assigned to ROBERT BOSCH GMBH (Stuttgart, Germany).

"Field-effect transistor, and methods for production" was invented by Daniel Krebs (Aufhausen, Germany) and Dick Scholten (Stuttgart, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "A field-effect transistor. The field-effect transistor includes: a source layer doped according to a first type, a drain layer doped according to a first type, a channel layer located vertically between the source layer doped according to the first type and the drain layer doped according to the first type, and a gate trench which extends vertically from the source layer doped according ...