US Patent Issued to International Business Machines on June 9 for "Reduced N-well and P-well spacing" (New York Inventor)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,832, issued on June 9, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Reduced N-well and P-well spacing" was invented by Effendi Leobandung (Stormville, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments disclosed herein describe semiconductor devices that include a semiconductor device includes a shallow trench isolation (STI) oxide and an N-well region with a N-well implant dopant. The N-well region may contact a first side of the STI oxide. The semiconductor structure also includes a P-well region with a P-well implant dopant. The P-well region may contact a second side of the STI oxide."

The patent was filed ...