ALEXANDRIA, Va., Oct. 6 -- United States Patent no. 12,757,713, issued on Oct. 6, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Through layer skip via" was invented by Nichol... Read More
ALEXANDRIA, Va., Oct. 6 -- United States Patent no. 12,757,714, issued on Oct. 6, was assigned to ABLIC Inc. (Nagano, Japan). "Capacitive element and semiconductor device" was invented by Mitsuhiro Y... Read More
ALEXANDRIA, Va., Oct. 6 -- United States Patent no. 12,757,715, issued on Oct. 6, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Method and structure for forming landing for b... Read More
ALEXANDRIA, Va., Oct. 6 -- United States Patent no. 12,757,716, issued on Oct. 6, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Single backside power plane for improved power... Read More
ALEXANDRIA, Va., Oct. 6 -- United States Patent no. 12,757,717, issued on Oct. 6, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Vertical-transport field-effect transistors wi... Read More
ALEXANDRIA, Va., Oct. 6 -- United States Patent no. 12,757,718, issued on Oct. 6, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Power gating transistor for BSPDN" was invente... Read More
ALEXANDRIA, Va., Oct. 6 -- United States Patent no. 12,757,719, issued on Oct. 6, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor device having a through contact ... Read More
ALEXANDRIA, Va., Oct. 6 -- United States Patent no. 12,757,720, issued on Oct. 6, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor device and electronic system inc... Read More
ALEXANDRIA, Va., Oct. 6 -- United States Patent no. 12,757,721, issued on Oct. 6, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan). "Barrier layers for interconnects in bonded wa... Read More
ALEXANDRIA, Va., Oct. 6 -- United States Patent no. 12,757,722, issued on Oct. 6, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China). "Memory and fabrication method thereof and memor... Read More