US Patent Issued to SAMSUNG ELECTRONICS on Oct. 6 for "Semiconductor device having a through contact connected to a buried pattern and penetrating a field insulation film and an etch stop layer" (South Korean Inventor)

ALEXANDRIA, Va., Oct. 6 -- United States Patent no. 12,757,719, issued on Oct. 6, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Semiconductor device having a through contact connected to a buried pattern and penetrating a field insulation film and an etch stop layer" was invented by Jin Bum Kim (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device may include: a substrate including a first side and a second side; an active pattern that is on the first side and extends in a first direction; an etch stop layer that extends along the first side and does not extend along side faces of the active pattern; a field insulating film that is on the first ...