US Patent Issued to ABLIC on Oct. 6 for "Capacitive element and semiconductor device" (Japanese Inventor)

ALEXANDRIA, Va., Oct. 6 -- United States Patent no. 12,757,714, issued on Oct. 6, was assigned to ABLIC Inc. (Nagano, Japan).

"Capacitive element and semiconductor device" was invented by Mitsuhiro Yoshimura (Nagano, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A capacitive element 100 includes a P-type semiconductor substrate 110, a capacitor structure 150 formed above the P-type semiconductor substrate 110, and a shielding layer 130 formed between the P-type semiconductor substrate 110 and the capacitor structure 150 and electrically connected to the P-type semiconductor substrate 110. Preferably, a pair of electrodes 150a and 150b in the capacitor structure 150 are at a first potential V1 and a se...