ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,513, issued on April 21, was assigned to International Business Machines Corp. (Armonk, N.Y.). "SRAM with improved program and sensing mar... Read More
ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,514, issued on April 21, was assigned to Beijing Superstring Academy of Memory Technology (Beijing) and INSTITUTE OF MIRCOELECTRONICS, CHIN... Read More
ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,515, issued on April 21, was assigned to KIOXIA Corp. (Tokyo). "Semiconductor memory device including a substrate that includes a first re... Read More
ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,516, issued on April 21, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China). "Semiconductor structure and method making... Read More
ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,517, issued on April 21, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China). "Method of manufacturing semiconductor str... Read More
ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,518, issued on April 21, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China). "Manufacturing method of semiconductor str... Read More
ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,519, issued on April 21, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan). "Semiconductor structure and manufacturing meth... Read More
ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,520, issued on April 21, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China). "Semiconductor structure and manufacturing... Read More
ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,521, issued on April 21, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China). "Semiconductor memory having discrete active re... Read More
ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,522, issued on April 21, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China). "Semiconductor structure and method for fo... Read More