US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on April 21 for "Semiconductor structure and method making the same" (Chinese Inventor)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,516, issued on April 21, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China).

"Semiconductor structure and method making the same" was invented by Qinghua Han (Hefei City, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a semiconductor structure including: a channel on a semiconductor substrate for a first transistor; first bit lines are in contact with the first doped region arranged along the first direction; first word lines surround the channel region; the gate conductive layer and the second doped region, the channel layer arranged around the outer side of the gate conductive layer; the fi...