US Patent Issued to Intel on June 2 for "Subfins replaced using backside dielectric formation" (Oregon Inventors)

ALEXANDRIA, Va., June 2 -- United States Patent no. 12,648,195, issued on June 2, was assigned to Intel Corp. (Santa Clara, Calif.). "Subfins replaced using backside dielectric formation" was invente... Read More

US Patent Issued to University of Copenhagen on June 2 for "Method for manufacture of nanostructure electrical devices" (Danish Inventors)

ALEXANDRIA, Va., June 2 -- United States Patent no. 12,648,196, issued on June 2, was assigned to University of Copenhagen (Copenhagen K, Denmark). "Method for manufacture of nanostructure electrical... Read More

US Patent Issued to ROHM on June 2 for "Semiconductor device" (Japanese Inventor)

ALEXANDRIA, Va., June 2 -- United States Patent no. 12,648,197, issued on June 2, was assigned to ROHM Co. LTD. (Kyoto, Japan). "Semiconductor device" was invented by Shinya Umeki (Kyoto, Japan). Ac... Read More

US Patent Issued to SAMSUNG ELECTRONICS on June 2 for "Semiconductor device having a SiGe blocking layer and method of fabricating the same" (South Korean Inventors)

ALEXANDRIA, Va., June 2 -- United States Patent no. 12,648,198, issued on June 2, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Semiconductor device having a SiGe blocking la... Read More

US Patent Issued to Taiwan Semiconductor Manufacturing on June 2 for "Isolation structure for source/drain of semiconductor device" (Taiwanese Inventors)

ALEXANDRIA, Va., June 2 -- United States Patent no. 12,648,199, issued on June 2, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Isolation structure for source/drain ... Read More

US Patent Issued to Intel on June 2 for "Integrated circuit structures with source or drain dopant diffusion blocking layers" (Oregon Inventors)

ALEXANDRIA, Va., June 2 -- United States Patent no. 12,648,200, issued on June 2, was assigned to Intel Corp. (Santa Clara, Calif.). "Integrated circuit structures with source or drain dopant diffusi... Read More

US Patent Issued to SUZHOU ORIENTAL SEMICONDUCTOR on June 2 for "Semiconductor power device" (Chinese Inventors)

ALEXANDRIA, Va., June 2 -- United States Patent no. 12,648,201, issued on June 2, was assigned to SUZHOU ORIENTAL SEMICONDUCTOR Co. LTD. (Jiangsu, China). "Semiconductor power device" was invented by... Read More

US Patent Issued to Mitsubishi Electric on June 2 for "Semiconductor device, method of manufacturing semiconductor device, and power conversion device" (Japanese Inventors)

ALEXANDRIA, Va., June 2 -- United States Patent no. 12,648,202, issued on June 2, was assigned to Mitsubishi Electric Corp. (Tokyo). "Semiconductor device, method of manufacturing semiconductor devic... Read More

US Patent Issued to Tokyo Electron on June 2 for "Electrode of semiconductor device and method of manufacturing same" (Japanese Inventor)

ALEXANDRIA, Va., June 2 -- United States Patent no. 12,648,203, issued on June 2, was assigned to Tokyo Electron Ltd. (Tokyo). "Electrode of semiconductor device and method of manufacturing same" was... Read More

US Patent Issued to MagnaChip Semiconductor on June 2 for "Mask layout, semiconductor device and manufacturing method using the same" (South Korean Inventor)

ALEXANDRIA, Va., June 2 -- United States Patent no. 12,648,204, issued on June 2, was assigned to MagnaChip Semiconductor Ltd. (Cheongju-si, South Korea). "Mask layout, semiconductor device and manuf... Read More

• ««
• «
• 80177
• 80178
• 80179
• 80180
• 80181
• 80182
• 80183
• 80184
• 80185
• 80186
• »
• »»