US Patent Issued to Taiwan Semiconductor Manufacturing on June 2 for "Isolation structure for source/drain of semiconductor device" (Taiwanese Inventors)

ALEXANDRIA, Va., June 2 -- United States Patent no. 12,648,199, issued on June 2, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Isolation structure for source/drain of semiconductor device" was invented by Chao-Shuo Chen (Hsinchu, Taiwan), Chia-Der Chang (Hsinchu, Taiwan) and Yi-Jing Lee (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure describes a semiconductor structure and a method for forming the same. The semiconductor structure can include a substrate, an insulating stack formed over the substrate, a vertical structure formed through the insulating stack, a source/drain region formed over the vertical structure, and an isolation str...