US Patent Issued to SUZHOU ORIENTAL SEMICONDUCTOR on June 2 for "Semiconductor power device" (Chinese Inventors)

ALEXANDRIA, Va., June 2 -- United States Patent no. 12,648,201, issued on June 2, was assigned to SUZHOU ORIENTAL SEMICONDUCTOR Co. LTD. (Jiangsu, China).

"Semiconductor power device" was invented by Yi Gong (Jiangsu, China), Zhendong Mao (Jiangsu, China), Wei Liu (Jiangsu, China) and Zhenyi Xu (Jiangsu, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a semiconductor power device. The semiconductor power device includes a semiconductor substrate and p-type body regions disposed in the semiconductor substrate. The p-type body regions are in contact with a source metal layer. The semiconductor substrate includes at least one first region, and a region of the semiconductor substrate outside the...