US Patent Issued to Tokyo Electron on June 2 for "Electrode of semiconductor device and method of manufacturing same" (Japanese Inventor)

ALEXANDRIA, Va., June 2 -- United States Patent no. 12,648,203, issued on June 2, was assigned to Tokyo Electron Ltd. (Tokyo).

"Electrode of semiconductor device and method of manufacturing same" was invented by Yasushi Akasaka (Nirasaki City, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing an electrode of a semiconductor device includes: preparing a semiconductor substrate including an impurity-doped region; forming a first metal layer on the impurity-doped region; forming a second metal layer on the first metal layer; and heating the semiconductor substrate including the first metal layer and the second metal layer, wherein the impurity-doped region contains silicon, wherein ...