US Patent Issued to SAMSUNG ELECTRONICS on June 2 for "Semiconductor device having a SiGe blocking layer and method of fabricating the same" (South Korean Inventors)

ALEXANDRIA, Va., June 2 -- United States Patent no. 12,648,198, issued on June 2, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Semiconductor device having a SiGe blocking layer and method of fabricating the same" was invented by Hyumin Yoo (Suwon-si, South Korea), Myung Gil Kang (Suwon-si, South Korea), Dongwon Kim (Suwon-si, South Korea), Jongsu Kim (Suwon-si, South Korea), Beomjin Park (Suwon-si, South Korea) and Byeonghee Son (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate including an active pattern; a channel pattern on the active pattern, the channel pattern including a plurality of semiconductor patterns, which...