US Patent Issued to Wuhan Optical Valley Information Optoelectronics Innovation Center on June 16 for "Laterally structured avalanche photodetector and manufacturing method therefor" (Chinese Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,332, issued on June 16, was assigned to Wuhan Optical Valley Information Optoelectronics Innovation Center Co. Ltd. (Wuhan, China). "Latera... Read More

US Patent Issued to Sony Semiconductor Solutions on June 16 for "Imaging element with bonded chips or substrates and method for manufacturing imaging element" (Japanese Inventor)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,333, issued on June 16, was assigned to Sony Semiconductor Solutions Corp. (Kanagawa, Japan). "Imaging element with bonded chips or substra... Read More

US Patent Issued to Taiwan Semiconductor Manufacturing on June 16 for "Backside deep trench isolation (BDTI) structure for CMOS image sensor" (Taiwanese Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,334, issued on June 16, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Backside deep trench isolation (BDT... Read More

US Patent Issued to California Institute of Technology on June 16 for "2D-doped surface passivation structure and method of manufacture" (California Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,335, issued on June 16, was assigned to California Institute of Technology (Pasadena, Calif.). "2D-doped surface passivation structure and ... Read More

US Patent Issued to SK HYNIX on June 16 for "Image sensing device including overcoating layer between color filters and method of manufacturing the same" (South Korean Inventor)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,336, issued on June 16, was assigned to SK HYNIX INC. (Icheon-si, South Korea). "Image sensing device including overcoating layer between c... Read More

US Patent Issued to Shaghai Huali Microelectronics on June 16 for "CMOS image sensor with a electrotransfer structure comprising a vertical gate extending from a top semiconductor substrate into a bottom semiconductor substrate of a silicon-on-insulator substrate and method for manufacturing same" (Chinese Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,337, issued on June 16, was assigned to Shaghai Huali Microelectronics Corp. (Shanghai). "CMOS image sensor with a electrotransfer structur... Read More

US Patent Issued to TIANMA JAPAN on June 16 for "Photodiode array and image sensor" (Japanese Inventor)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,338, issued on June 16, was assigned to TIANMA JAPAN LTD. (Kanagawa, Japan). "Photodiode array and image sensor" was invented by Shuhei Nar... Read More

US Patent Issued to Taiwan Semiconductor Manufacturing on June 16 for "Stacked CMOS image sensor" (Taiwanese Inventor)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,339, issued on June 16, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Stacked CMOS image sensor" was inve... Read More

US Patent Issued to SAMSUNG ELECTRONICS on June 16 for "Image sensor" (South Korean Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,340, issued on June 16, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Image sensor" was invented by Haewook Jeong ... Read More

US Patent Issued to NIKON on June 16 for "Image sensor and image capture device" (Japanese Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,341, issued on June 16, was assigned to NIKON Corp. (Tokyo). "Image sensor and image capture device" was invented by Shigeru Matsumoto (Sag... Read More

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