ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,339, issued on June 16, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Stacked CMOS image sensor" was invented by Tzu-Hsuan Hsu (Kaohsiung City, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Various embodiments of the present disclosure are directed towards a stacked complementary metal-oxide semiconductor (CMOS) image sensor in which a pixel sensor spans multiple integrated circuit (IC) chips and has only a first gate dielectric thickness at a first IC chip at which a photodetector of the of the pixel sensor is arranged. Further, the pixel sensor has only one or more second gate dielectric thicknesses at a s...