US Patent Issued to Taiwan Semiconductor Manufacturing on June 16 for "Backside deep trench isolation (BDTI) structure for CMOS image sensor" (Taiwanese Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,334, issued on June 16, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Backside deep trench isolation (BDTI) structure for CMOS image sensor" was invented by Hsin-Hung Chen (Tainan City, Taiwan), Dun-Nian Yaung (Taipei City, Taiwan), Jen-Cheng Liu (Hsin-Chu City, Taiwan), Feng-Chi Hung (Chu-Bei City, Taiwan), Wen-Chang Kuo (Tainan City, Taiwan), Hung-Wen Hsu (Tainan City, Taiwan) and Shih-Chang Liu (Alian Township, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In some embodiments, the present disclosure relates to a method for forming an image sensor and associated device structure. A backside deep trench iso...