US Patent Issued to Shaghai Huali Microelectronics on June 16 for "CMOS image sensor with a electrotransfer structure comprising a vertical gate extending from a top semiconductor substrate into a bottom semiconductor substrate of a silicon-on-insulator substrate and method for manufacturing same" (Chinese Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,337, issued on June 16, was assigned to Shaghai Huali Microelectronics Corp. (Shanghai).

"CMOS image sensor with a electrotransfer structure comprising a vertical gate extending from a top semiconductor substrate into a bottom semiconductor substrate of a silicon-on-insulator substrate and method for manufacturing same" was invented by Chenchen Qiu (Shanghai), Jun Qian (Shanghai), Chang Sun (Shanghai) and Zhengying Wei (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application discloses a CMOS image sensor. A pixel cell circuit comprises a photodiode and a CMOS pixel readout circuit. The pixel cell circuit is formed on an SOI s...