US Patent Issued to Micron Technology on April 14 for "Methods of forming microelectronic devices" (Idaho Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,603,124, issued on April 14, was assigned to Micron Technology Inc. (Boise, Idaho). "Methods of forming microelectronic devices" was invented ... Read More

US Patent Issued to Micron Technology on April 14 for "Self-timing read termination" (German, Taiwanese Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,603,125, issued on April 14, was assigned to Micron Technology Inc. (Boise, Idaho). "Self-timing read termination" was invented by Milena Tsve... Read More

US Patent Issued on April 14 for "Read and write enhancements for arrays of superconducting memory cells" (Maryland Inventor)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,603,126, issued on April 14. "Read and write enhancements for arrays of superconducting memory cells" was invented by William Robert Reohr (Se... Read More

US Patent Issued to Taiwan Semiconductor Manufacturing on April 14 for "Phase change element configured to increase discrete data states" (Taiwanese Inventor)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,603,127, issued on April 14, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Phase change element configured t... Read More

US Patent Issued to Taiwan Semiconductor Manufacturing on April 14 for "Methods of controlling PCRAM devices in single-level-cell (SLC) and multi-level-cell (MLC) modes and a controller for performing the same methods" (Taiwanese Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,603,128, issued on April 14, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Methods of controlling PCRAM devi... Read More

US Patent Issued to Micron Technology on April 14 for "Ramp-based biasing in a memory device" (California Inventor)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,603,129, issued on April 14, was assigned to Micron Technology Inc. (Boise, Idaho). "Ramp-based biasing in a memory device" was invented by Ha... Read More

US Patent Issued to SHANGHAI IC R&D CENTER on April 14 for "Memory and reading, writing and erasing methods thereof" (Chinese Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,603,130, issued on April 14, was assigned to SHANGHAI IC R&D CENTER Co. LTD. (Shanghai). "Memory and reading, writing and erasing methods ther... Read More

US Patent Issued to MACRONIX International on April 14 for "Gate-controlled thyristor and CAM array" (Taiwanese Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,603,131, issued on April 14, was assigned to MACRONIX International Co. Ltd. (Hsinchu, Taiwan). "Gate-controlled thyristor and CAM array" was ... Read More

US Patent Issued to Micron Technology on April 14 for "Methods of forming microelectronic devices, and related microelectronic devices, memory devices, and electronic systems each with a filled trench within a stadium structure of at least one block" (Idaho Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,603,132, issued on April 14, was assigned to Micron Technology Inc. (Boise, Idaho). "Methods of forming microelectronic devices, and related m... Read More

US Patent Issued to Micron Technology on April 14 for "Slow charge loss monitor for power up performance boosting" (Idaho, Colorado Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,603,133, issued on April 14, was assigned to Micron Technology Inc. (Boise, Idaho). "Slow charge loss monitor for power up performance boostin... Read More

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