ALEXANDRIA, Va., April 15 -- United States Patent no. 12,603,129, issued on April 14, was assigned to Micron Technology Inc. (Boise, Idaho).
"Ramp-based biasing in a memory device" was invented by Hari Giduturi (Folsom, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Methods and systems include memory devices with multiple access lines arranged in an array to form a multiple intersections. Memory cells are located at the intersections of the multiple access lines. Decoders are configured to drive the multiple memory cells via the multiple access lines. Variable biasing circuitry may bias a voltage on an access line of the multiple access lines to change a variable ramp rate of the voltage on the access...