ALEXANDRIA, Va., April 15 -- United States Patent no. 12,603,127, issued on April 14, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Phase change element configured to increase discrete data states" was invented by Jau-Yi Wu (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Some embodiments relate to a memory device. The memory device includes a phase change element (PCE) overlying a substrate. A bottom electrode via is disposed over the substrate. A top electrode overlies the bottom electrode via. The PCE is disposed between the bottom electrode via and the top electrode. The PCE comprises a chalcogenide material. The chalcogenide material comprises a fi...