US Patent Issued to Micron Technology on April 14 for "Methods of forming microelectronic devices, and related microelectronic devices, memory devices, and electronic systems each with a filled trench within a stadium structure of at least one block" (Idaho Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,603,132, issued on April 14, was assigned to Micron Technology Inc. (Boise, Idaho).

"Methods of forming microelectronic devices, and related microelectronic devices, memory devices, and electronic systems each with a filled trench within a stadium structure of at least one block" was invented by Rui Zhang (Boise, Idaho), Shuangqiang Luo (Boise, Idaho), Mohad Baboli (Boise, Idaho) and Rajasekhar Venigalla (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "A microelectronic device includes a stack structure including blocks separated from one another by dielectric slot structures and each including a vertically alternating sequence of conductiv...