US Patent Issued to Adeia Semiconductor Solutions on May 5 for "High density three-dimensional integrated capacitors" (California Inventors)

ALEXANDRIA, Va., May 5 -- United States Patent no. 12,622,003, issued on May 5, was assigned to Adeia Semiconductor Solutions LLC (San Jose, Calif.). "High density three-dimensional integrated capaci... Read More

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on May 5 for "Semiconductor trench capacitor structure and manufacturing method thereof" (Taiwanese Inventor)

ALEXANDRIA, Va., May 5 -- United States Patent no. 12,622,004, issued on May 5, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Semiconductor trench capacitor stru... Read More

US Patent Issued to Samsung Electronics on May 5 for "Integration scheme for fabricating high precision, low capacitor with unlanded via" (Texas Inventors)

ALEXANDRIA, Va., May 5 -- United States Patent no. 12,622,005, issued on May 5, was assigned to Samsung Electronics Co. Ltd (South Korea). "Integration scheme for fabricating high precision, low capa... Read More

US Patent Issued to SAMSUNG ELECTRONICS on May 5 for "Semiconductor device" (South Korean Inventors)

ALEXANDRIA, Va., May 5 -- United States Patent no. 12,622,006, issued on May 5, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Semiconductor device" was invented by Sungil Par... Read More

US Patent Issued to ElectroPhotonic-IC on May 5 for "Type I-II transistor with a manufacturable ledge" (Canadian, American Inventors)

ALEXANDRIA, Va., May 5 -- United States Patent no. 12,622,007, issued on May 5, was assigned to ElectroPhotonic-IC Inc. (Kanata, Canada). "Type I-II transistor with a manufacturable ledge" was invent... Read More

US Patent Issued to Northwestern University on May 5 for "III-Nitride/gallium oxide based high electron mobility transistors" (Illinois Inventor)

ALEXANDRIA, Va., May 5 -- United States Patent no. 12,622,008, issued on May 5, was assigned to Northwestern University (Evanston, Ill.). "III-Nitride/gallium oxide based high electron mobility trans... Read More

US Patent Issued to CSMC TECHNOLOGIES FAB2, SOUTHEAST UNIVERSITY on May 5 for "DMOS device having junction field plate and manufacturing method therefor" (Chinese Inventors)

ALEXANDRIA, Va., May 5 -- United States Patent no. 12,622,009, issued on May 5, was assigned to CSMC TECHNOLOGIES FAB2 Co. LTD. (Wuxi, China) and SOUTHEAST UNIVERSITY (Nanjing, China). "DMOS device h... Read More

US Patent Issued to 1FINITY on May 5 for "Semiconductor device and method for manufacturing semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., May 5 -- United States Patent no. 12,622,010, issued on May 5, was assigned to 1FINITY Inc. (Kawasaki, Japan). "Semiconductor device and method for manufacturing semiconductor device... Read More

US Patent Issued to NXP USA on May 5 for "Semiconductor device with diffusion barrier layer and method of fabrication therefor" (Arizona Inventor)

ALEXANDRIA, Va., May 5 -- United States Patent no. 12,622,011, issued on May 5, was assigned to NXP USA INC. (Austin, Texas). "Semiconductor device with diffusion barrier layer and method of fabricat... Read More

US Patent Issued to The Hong Kong University of Science and Technology on May 5 for "Normally-off p -GaN gate double channel HEMT and the manufacturing method thereof" (Chinese Inventors)

ALEXANDRIA, Va., May 5 -- United States Patent no. 12,622,012, issued on May 5, was assigned to The Hong Kong University of Science and Technology (Hong Kong). "Normally-off p -GaN gate double channe... Read More

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