US Patent Issued to Samsung Electronics on May 5 for "Integration scheme for fabricating high precision, low capacitor with unlanded via" (Texas Inventors)

ALEXANDRIA, Va., May 5 -- United States Patent no. 12,622,005, issued on May 5, was assigned to Samsung Electronics Co. Ltd (South Korea).

"Integration scheme for fabricating high precision, low capacitor with unlanded via" was invented by Sunil Kumar Singh (Round Rock, Texas) and Sivashankar Sivasubramanian (Austin, Texas).

According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor devices including a capacitor and methods of fabricating the semiconductor devices are disclosed. A method of fabricating a semiconductor device including a capacitor includes forming an underlayer structure including a substrate onto which metal is patterned within a first dielectric material, wherein the patterned metal forms a...