US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on May 5 for "Semiconductor trench capacitor structure and manufacturing method thereof" (Taiwanese Inventor)

ALEXANDRIA, Va., May 5 -- United States Patent no. 12,622,004, issued on May 5, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor trench capacitor structure and manufacturing method thereof" was invented by Fu-Chiang Kuo (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor trench capacitor structure is provided. The semiconductor trench capacitor comprises a semiconductor substrate; a trench capacitor overlying the semiconductor substrate, wherein the trench capacitor comprises a plurality of trench electrodes and a plurality of capacitor dielectric layers that are alternatingly stacked over the semiconductor substrate and defines a p...