US Patent Issued to ElectroPhotonic-IC on May 5 for "Type I-II transistor with a manufacturable ledge" (Canadian, American Inventors)

ALEXANDRIA, Va., May 5 -- United States Patent no. 12,622,007, issued on May 5, was assigned to ElectroPhotonic-IC Inc. (Kanata, Canada).

"Type I-II transistor with a manufacturable ledge" was invented by Lawrence E. Tarof (Kanata, Canada), Barry Wu (Kanata, Canada), Dhiraj Kumar (Redondo Beach, Calif.) and Milton Feng (Kanata, Canada).

According to the abstract* released by the U.S. Patent & Trademark Office: "A transistor comprising a plurality of semiconductor layers arranged to form a base, an emitter and a collector wherein the emitter is of a first semiconductor material and comprises an emitter ledge being made from a material which is selectively etchable relative to the emitter or base material to produce the emitter ledge that i...