US Patent Issued to Northwestern University on May 5 for "III-Nitride/gallium oxide based high electron mobility transistors" (Illinois Inventor)

ALEXANDRIA, Va., May 5 -- United States Patent no. 12,622,008, issued on May 5, was assigned to Northwestern University (Evanston, Ill.).

"III-Nitride/gallium oxide based high electron mobility transistors" was invented by Manijeh Razeghi (Wilmette, Ill.).

According to the abstract* released by the U.S. Patent & Trademark Office: "High electron mobility transistors are provided which comprise a III-Nitride semiconductor layer comprising a III-Nitride semiconductor, in contact with a gallium oxide semiconductor layer comprising gallium oxide, forming an interface therebetween."

The patent was filed on Sept. 7, 2022, under Application No. 17/939,048.

*For further information, including images, charts and tables, please visit: http://patft...