US Patent Issued to INNOSCIENCE (SUZHOU) TECHNOLOGY on May 12 for "Nitride-based semiconductor device with gate protection layer and method for manufacturing the same" (Chinese Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,369, issued on May 12, was assigned to INNOSCIENCE (SUZHOU) TECHNOLOGY Co. LTD. (Suzhou City, China). "Nitride-based semiconductor device wi... Read More

US Patent Issued to SUMITOMO ELECTRIC INDUSTRIES on May 12 for "Semiconductor device with multilayer source and drain regions formed in openings of electron supply and transit layers" (Japanese Inventor)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,370, issued on May 12, was assigned to SUMITOMO ELECTRIC INDUSTRIES LTD. (Osaka, Japan). "Semiconductor device with multilayer source and dr... Read More

US Patent Issued to SAMSUNG ELECTRONICS on May 12 for "Semiconductor device and method of manufacturing the semiconductor device" (South Korean Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,371, issued on May 12, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor device and method of manufacturi... Read More

US Patent Issued to Taiwan Semiconductor Manufacturing on May 12 for "Capacitance reduction for backside power rail device" (Taiwanese Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,372, issued on May 12, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Capacitance reduction for backside po... Read More

US Patent Issued to Infineon Technologies on May 12 for "Semiconductor device having a field termination structure and a charge balance structure, and method of producing the semiconductor device" (German Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,373, issued on May 12, was assigned to Infineon Technologies AG (Neubiberg, Germany). "Semiconductor device having a field termination struc... Read More

US Patent Issued to Renesas Electronics on May 12 for "Semiconductor device and method of manufacturing the same" (Japanese Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,374, issued on May 12, was assigned to Renesas Electronics Corp. (Tokyo). "Semiconductor device and method of manufacturing the same" was in... Read More

US Patent Issued to International Business Machines on May 12 for "Nanosheet transistor with asymmetric junction and robust structure stability" (New York Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,375, issued on May 12, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Nanosheet transistor with asymmetric junction ... Read More

US Patent Issued to GLOBALFOUNDRIES U.S. on May 12 for "Nanosheet structures with tunable channels and inner sidewall spacers" (New York, Vermont, California Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,376, issued on May 12, was assigned to GLOBALFOUNDRIES U.S. Inc (Malta, N.Y.). "Nanosheet structures with tunable channels and inner sidewal... Read More

बर्ड डे पार्टी में डांस करने से किया मना, दी जान

भदोही, मई 12 -- सीतामढ़ी, हिन्दुस्तान संवाद। बेटे के जन्मदिन की पार्टी में पत्नी को डांस करने से पति ने मना किया। इसी बात को लेकर नाराज विवाहिता ने रविवार की देर रात कमरे के छत के पंखे में साड़ी के सह... Read More

युवक की मौत के मामले में नौ को आजीवन कारावास

भदोही, मई 12 -- भदोही, संवाददाता। ऑपरेशन कन्विक्शन के तहत चिन्हित मामलों में दोषियों को सजा दिलाने का क्रम जारी है। इसी कड़ी में मारपीट के दौरान के लाठी, डंडे से चोट लगने के कारण मौत के मामले में नौ द... Read More

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