US Patent Issued to Taiwan Semiconductor Manufacturing on May 12 for "Capacitance reduction for backside power rail device" (Taiwanese Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,372, issued on May 12, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Capacitance reduction for backside power rail device" was invented by Li-Zhen Yu (New Taipei, Taiwan), Lin-Yu Huang (Hsinchu, Taiwan), Cheng-Chi Chuang (New Taipei, Taiwan), Chih-Hao Wang (Baoshan Township, Taiwan) and Huan-Chieh Su (Tianzhong Township, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure describes a method to form a backside power rail (BPR) semiconductor device with an air gap. The method includes forming a fin structure on a first side of a substrate, forming a source/drain (S/D) region adjacent to the fin...