US Patent Issued to GLOBALFOUNDRIES U.S. on May 12 for "Nanosheet structures with tunable channels and inner sidewall spacers" (New York, Vermont, California Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,376, issued on May 12, was assigned to GLOBALFOUNDRIES U.S. Inc (Malta, N.Y.).

"Nanosheet structures with tunable channels and inner sidewall spacers" was invented by Hong Yu (Clifton Park, N.Y.), David C. Pritchard (Glenville, N.Y.), Navneet K. Jain (Milpitas, Calif.), James P. Mazza (Saratoga Springs, N.Y.) and Romain H. A. Feuillette (Williston, Vt.).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to semiconductor structures and, more particularly, to nanosheet transistor structures with tunable channels and inner sidewall spacers and methods of manufacture. The structure includes: a plurality of stacked semiconductor ...