US Patent Issued to SUMITOMO ELECTRIC INDUSTRIES on May 12 for "Semiconductor device with multilayer source and drain regions formed in openings of electron supply and transit layers" (Japanese Inventor)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,370, issued on May 12, was assigned to SUMITOMO ELECTRIC INDUSTRIES LTD. (Osaka, Japan).

"Semiconductor device with multilayer source and drain regions formed in openings of electron supply and transit layers" was invented by Daiki Takayama (Osaka, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device according to one aspect of the present disclosure includes a substrate including a first main surface, a semiconductor layer provided on the first main surface of the substrate, and a gate electrode, a source electrode, and a drain electrode, provided on the semiconductor layer. The semiconductor layer has an electron transit layer...