US Patent Issued to Renesas Electronics on May 12 for "Semiconductor device and method of manufacturing the same" (Japanese Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,374, issued on May 12, was assigned to Renesas Electronics Corp. (Tokyo).

"Semiconductor device and method of manufacturing the same" was invented by Yuya Abiko (Tokyo) and Takahiro Maruyama (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "An improved power MOSFET of a split gate structure including a gate electrode and a field plate electrode in a trench is disclosed. The improved power MOSFET includes a field plate electrode FP formed at a lower portion of a trench TR and a gate electrode GE formed an upper portion of the trench TR. The field plate electrode FP further includes a contact portion FPa which is formed at the upper portion of the ...