US Patent Issued to Taiwan Semiconductor Manufacturing on May 12 for "Ferromagnetic plates for enhancing inductance and methods of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,357, issued on May 12, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Ferromagnetic plates for enhancing in... Read More

US Patent Issued to QUALCOMM on May 12 for "Vertically integrated device stack including system on chip and power management integrated circuit" (Washington, California Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,358, issued on May 12, was assigned to QUALCOMM Inc. (San Diego). "Vertically integrated device stack including system on chip and power man... Read More

US Patent Issued to DB HiTek on May 12 for "Deep trench capacitor and method of manufacturing same" (South Korean Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,359, issued on May 12, was assigned to DB HiTek Co. Ltd. (Bucheon-si, South Korea). "Deep trench capacitor and method of manufacturing same"... Read More

US Patent Issued to Murata Manufacturing on May 12 for "Semiconductor device with protective protrusion" (Japanese Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,360, issued on May 12, was assigned to Murata Manufacturing Co. Ltd. (Kyoto, Japan). "Semiconductor device with protective protrusion" was i... Read More

US Patent Issued to SAMSUNG ELECTRONICS on May 12 for "Dielectric having high-dielectric constant, method of manufacturing the same, target material for manufacturing the dielectric, electronic device including the dielectric, and electronic apparatus including the electronic device" (South Korean Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,361, issued on May 12, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea). "Dielectric having high-dielectric constant,... Read More

US Patent Issued to UNITED MICROELECTRONICS on May 12 for "High electron mobility transistor and method for fabricating the same" (Taiwanese Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,364, issued on May 12, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan). "High electron mobility transistor and method ... Read More

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on May 12 for "Semiconductor device structure and methods of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,365, issued on May 12, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Semiconductor device structure an... Read More

US Patent Issued to UNITED MICROELECTRONICS on May 12 for "Semiconductor device and method for fabricating the same" (Taiwanese Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,366, issued on May 12, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan). "Semiconductor device and method for fabricati... Read More

US Patent Issued to International Business Machines on May 12 for "Vertical transistors having improved control of parasitic capacitance and gate-to-contact short circuits" (American, Japanese Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,367, issued on May 12, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Vertical transistors having improved control o... Read More

US Patent Issued to Mitsubishi Electric on May 12 for "Semiconductor device and method of manufacturing semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,368, issued on May 12, was assigned to Mitsubishi Electric Corp. (Tokyo). "Semiconductor device and method of manufacturing semiconductor de... Read More

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