US Patent Issued to Mitsubishi Electric on May 12 for "Semiconductor device and method of manufacturing semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,368, issued on May 12, was assigned to Mitsubishi Electric Corp. (Tokyo).

"Semiconductor device and method of manufacturing semiconductor device" was invented by Ryohei Nonoda (Tokyo) and Atsushi Era (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device according to the present invention includes a substrate, a plurality of semiconductor layers to be overlaid on the substrate and a gate electrode, a drain electrode, and a source electrode provided on the plurality of semiconductor layers, wherein each of the plurality of semiconductor layers includes a channel layer made with GaN and a barrier layer provided in contact with an ...