ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,801, issued on April 7, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Semiconductor device of physica... Read More
ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,802, issued on April 7, was assigned to LEADTREND TECHNOLOGY Corp. (Zhubei City, Taiwan). "High-voltage tolerant device and detection circu... Read More
ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,803, issued on April 7, was assigned to Intel Corp. (Santa Clara, Calif.). "Integrated circuit structures having gate cut offset" was inven... Read More
ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,804, issued on April 7, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Integrated circuit device" was invented by Y... Read More
ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,805, issued on April 7, was assigned to SEMICONDUCTOR COMPONENTS INDUSTRIES LLC (Scottsdale, Ariz.). "Vertical fin-based field effect trans... Read More
ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,806, issued on April 7, was assigned to UNIVERSITY-INDUSTRY COOPERATION GROUP OF KYUNG HEE UNIVERSITY (Yongin-si, South Korea). "Temperatur... Read More
ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,807, issued on April 7, was assigned to AUO Corp. (Hsinchu, Taiwan). "Thin film transistors having ferroelectric material for providing pix... Read More
ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,808, issued on April 7, was assigned to KYOCERA Corp. (Kyoto, Japan). "Display device and method for manufacturing display device" was inve... Read More
ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,809, issued on April 7, was assigned to Samsung Display Co. Ltd. (Yongin-si, South Korea). "Display device" was invented by Chang Yong Hong... Read More
ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,810, issued on April 7, was assigned to Intel Corp. (Santa Clara, Calif.). "Co-doping of thin film transistors" was invented by Van H. Le (... Read More